首頁 >SPP11N60C3>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SPP11N60C3 | Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPP11N60C3 | Cool MOS Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPP11N60C3 | N-Channel MOSFET Transistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
SPP11N60C3 | N-Channel 650 V (D-S) MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | |
SPP11N60C3 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPP11N60C3 | Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤380m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
COOLMOSPOWERTRANSISTOR | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數
- 型號:
SPP11N60C3
- 功能描述:
MOSFET COOL MOS N-CH 600V 11A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
19+ |
PG-TO220-3 |
1000 |
詢價 | |||
INFINEON |
1907+ |
NA |
3500 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEONE |
23+ |
TO-220 |
18689 |
原裝正品價格優(yōu)惠,長期優(yōu)勢供應 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220 |
20000 |
熱賣優(yōu)勢現(xiàn)貨 |
詢價 | ||
ST |
851 |
TO-220 |
3300 |
全新原裝絕對自己公司現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
TO-220 |
65400 |
詢價 | |||
INFINEON/英飛凌 |
2021+ |
TO-220 |
17703 |
原裝進口假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
20+原裝正品 |
TO220 |
6000 |
大量現(xiàn)貨,免費發(fā)樣。 |
詢價 | ||
INFINEON/英飛凌 |
2008+ |
TO-220 |
5000 |
進口原裝支持含稅 |
詢價 | ||
INFINEON |
23+ |
TO220F |
6996 |
只做原裝正品現(xiàn)貨 |
詢價 |
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