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SSRF10N60SL

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSRF10N60SL

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SSS10N60A

AdvancedPowerMOSFET

AdvancedPowerMOSFET BVDSS=600VRDS(on)=0.8ID=5.1A FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25(Max.)@VDS=600V LowRDS(ON):0.646(T

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSS10N60A

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SSS10N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSS10N60B

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SSS10N60B

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSW10N60B

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

STGB10N60L

N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT

N-CHANNEL10A-600VD2PAKLOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT ■SURFACE-MOUNTINGD2PAK(TO-263)POWERPACKAGEINTUBE(NOSUFFIX)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10N60

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT

N-CHANNEL10A-600VTO-220LOGICLEVELIGBT ■HIGHINPUTIMPEDANCE(VOLTAGEDRIVEN) ■VERYLOWON-VOLTAGEDROP(Vcesat) ■LOWTHRESHOLDVOLTAGE(LOGICLEVELINPUT) ■HIGHCURRENTCAPABILITY ■OFFLOSSESINCLUDETAILCURRENT APPLICATIONS ■ELECTRONICIGNITION ■LIGHTDIMMER ■STATICRELAY

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    SKW10N60A

  • 功能描述:

    IGBT 晶體管 FAST IGBT NPT TECH 600V 10A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
英飛翎
17+
TO-247
31518
原裝正品 可含稅交易
詢價(jià)
INFINEON
24+
P-TO247-3-1
8866
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
INFINEON/英飛凌
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
INFINEON
2022+
TO-247
57550
詢價(jià)
INFINEON
23+
TO-247
12800
公司只有原裝 歡迎來電咨詢。
詢價(jià)
INFINEON
23+
10A,600V
20000
全新原裝假一賠十
詢價(jià)
INFINEON/英飛凌
24+
NA/
12
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
INFINEON
22+
PG-TO247-3
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
INFINEON/英飛凌
22+
TO-247
15000
英飛凌MOS管、IGBT大量有貨
詢價(jià)
更多SKW10N60A供應(yīng)商 更新時(shí)間2025-4-28 10:00:00