零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SI4410DY | N-channel enhancement mode field-effect transistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: Si4410DYinSOT96-1(SO8). Features ■Lowon-stateresistance ■Fastswitching ■TrenchMOS?technology. Applications ■DCtoDCconvertor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
SI4410DY | Single N-Channel Logic Level PowerTrench MOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thisdeviceiswellsuitedforlowvoltageandbattery | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
SI4410DY | N-Channel 30-V (D-S) MOSFET FEATURES ??TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
SI4410DY | HEXFET Power MOSFET Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowon-resistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications TheSO- | IRF International Rectifier | IRF | |
SI4410DY | N-channel TrenchMOS logic level FET Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowcond | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | |
SI4410DY | N-Channel MOSFET ■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | |
SI4410DY | N-channel TrenchMOS logic level FET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | |
N-Channel MOSFET ■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
HEXFET?Power MOSFET Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO- | IRF International Rectifier | IRF | ||
N-Channel MOSFET Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO- | IRF International Rectifier | IRF | ||
N-Channel 30-V (D-S) MOSFET FEATURES ??TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-Channel 30-V (D-S) MOSFET FEATURES ??TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-Channel 30-V (D-S) MOSFET FEATURES ??TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-Channel 650 V (D-S) MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES ??TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-Channel MOSFET Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO- | IRF International Rectifier | IRF | ||
N-Channel 20V (D-S) MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronousRectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
Simple Drive Requirements | IRF International Rectifier | IRF | ||
Simple Drive Requirements | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
SI4410DY
- 功能描述:
MOSFET 30V N-Ch. FET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
20+原裝正品 |
SOP8 |
6000 |
大量現(xiàn)貨,免費(fèi)發(fā)樣。 |
詢價(jià) | ||
VISHAY/威世 |
24+ |
SOP8 |
13500 |
代理授權(quán)直銷,原裝現(xiàn)貨,假一罰十,長(zhǎng)期穩(wěn)定供應(yīng), |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SOP-8 |
5500 |
主營(yíng)品牌深圳百分百原裝現(xiàn)貨假一罰十絕對(duì)價(jià)優(yōu) |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SOP-8 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
VISHAY |
0830+ |
SOP8 |
45 |
原裝庫(kù)存有訂單來(lái)談優(yōu)勢(shì) |
詢價(jià) | ||
onsemi(安森美) |
23+ |
SOP-8 |
9555 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
TECH PUBLIC(臺(tái)舟) |
24+ |
SOP-8 |
5000 |
誠(chéng)信服務(wù),絕對(duì)原裝原盤。 |
詢價(jià) | ||
IR |
23+ |
95200 |
95200 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
NXP/恩智浦 |
24+ |
SOP-8 |
504083 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
VISHAY |
05/06+ |
SOP8 |
3024 |
全新原裝100真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) |
相關(guān)規(guī)格書
更多- SI4410DYPBF
- SI4410DYTRPBF-CUTTAPE
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相關(guān)庫(kù)存
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