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RFD10P03

10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD10P03L

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

RFD10P03L

10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD10P03L

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFD10P03LSM

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

RFD10P03LSM

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFD10P03LSM9A

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

RFD10P03L-251

P-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

RFP10P03L

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

Intersil

Intersil Corporation

RFP10P03L

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

RFP10P03L

10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

Harris Corporation

TS10P03G

SinglePhase10.0AMPS.GlassPassivatedBridgeRectifiers

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TS10P03G

SinglePhase10.0Amps.GlassPassivatedBridgeRectifiers

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TS10P03G

SinglePhase10.0Amps.GlassPassivatedBridgeRectifiers

FEATURES -Glasspassivatedjunction -Idealforprintedcircuitboard -TypicalIRlessthan0.1μA -Highsurgecurrentcapability -ULRecognizedFile#E-326243 -ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21defini

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TS10P03G

GlassPassivatedBridgeRectifiers

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

TS10P03G-K

10A,50V-1000VGlassPassivatedBridgeRectifier

FEATURES ●Glasspassivatedjunction ●Idealforprintedcircuitboard ●TypicalIRlessthan0.1μA ●Highsurgecurrentcapability ●ULRecognizedFile#E-326243 ●ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC APPLICATIONS ●Switchingmodepowersupply(SMPS

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

VS10P03LC

lowcapacitanceVSIP?tvsarray

PROTEC

Protek Devices

詳細參數(shù)

  • 型號：

    RFD10P03

  • 功能描述：

    MOSFET TO-251 P-Ch Power

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHIL
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
HARRIS
1816+
.
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
FAIRCHILD/仙童
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價
INTERSIL/FSC
23+
TO-251
28610
詢價
24+
N/A
5000
公司存貨
 詢價
INTERSIL
23+
TO-252
9500
專業(yè)優(yōu)勢供應
 詢價
哈里斯
24+
TO-252
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
HAR
23+
NA
299
專做原裝正品,假一罰百!
 詢價
FSC/ON
23+
原包裝原封 □□
1492
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
 詢價
更多RFD10P03供應商 更新時間2024-12-25 11:04:00

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