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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
RFD14N05	文件：157.91 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05	文件：220.35 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05	文件：961.31 Kbytes Page：7 Pages	N-Channel 60 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
RFD14N05L	文件：119.56 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05L	文件：74.4 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS	Intersil Intersil Corporation	Intersil
RFD14N05L	文件：214.73 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05L	文件：329.94 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
RFD14N05L	文件：668.74 Kbytes Page：7 Pages	60V N-Channel MOSFET Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve ?175℃OperatingTemperature VDS(V)=60V ??RDS(ON)	UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司	UMW
RFD14N05LSM	文件：119.56 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05LSM	文件：74.4 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS	Intersil Intersil Corporation	Intersil
RFD14N05LSM	文件：214.73 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05LSM	文件：298.58 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES DrainCurrent-ID=14A@TC=25℃ DrainSourceVoltage-VDSS=50V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
RFD14N05LSM	文件：668.74 Kbytes Page：7 Pages	60V N-Channel MOSFET Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve ?175℃OperatingTemperature VDS(V)=60V ??RDS(ON)	UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司	UMW
RFD14N05LSM9A	文件：214.73 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05LSM9A	文件：635.51 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features ?VDS=60V,ID=50A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
RFD14N05SM	文件：157.91 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05SM	文件：220.35 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05SM	文件：635.43 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features ?VDS=60V,ID=50A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
RFD14N05SM9A	文件：157.91 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD14N05SM9A	文件：220.35 Kbytes Page：8 Pages	14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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詳細(xì)參數(shù)

型號(hào)：
RFD14N05
功能描述：
MOSFET TO-251AA N-Ch Power
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市錦喆鴻電子有限公司	RFD14N05	INTERSIL	20+	TO-251	9986		詢價(jià)
深圳市高捷芯城科技有限公司	RFD14N05	onsemi(安森美)	23+	IPAK	7845	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
深圳市星佑電子有限公司	RFD14N05	仙童	05+	TO-251	5000	原裝進(jìn)口	詢價(jià)
深圳市一線半導(dǎo)體有限公司	RFD14N05	FAI	24+		108300		詢價(jià)
深圳市昌和盛利電子有限公司	RFD14N05	FAIRCHILD	23+	TO-251	9526		詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	RFD14N05	HAR	17+	TO-251	6200		詢價(jià)
深圳市博浩通科技有限公司	RFD14N05	Fairchild	23+	I-PAK(TO-251AA)	7750	全新原裝優(yōu)勢(shì)	詢價(jià)
深圳市永貝爾科技有限公司	RFD14N05	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市華來(lái)深電子有限公司	RFD14N05	FSC	23+	TO-252	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市振宏微科技有限公司	RFD14N05	FAIRCHILDSEM	23+	原廠封裝	13528	振宏微原裝正品,假一罰百	詢價(jià)

更多RFD14N05供應(yīng)商更新時(shí)間2024-12-26 11:13:00

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