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RFD14N05

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

RFD14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS

Intersil

Intersil Corporation

RFD14N05L

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

RFD14N05L

Marking：14N05L；Package：TO-252；60V N-Channel MOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve ?175℃OperatingTemperature VDS(V)=60V ??RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

RFD14N05LSM

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05LSM

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS

Intersil

Intersil Corporation

詳細參數(shù)

  • 型號：

    RFD14N05

  • 功能描述：

    MOSFET TO-251AA N-Ch Power

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INTERSIL
20+
TO-251
9986
詢價
onsemi(安森美)
23+
IPAK
7845
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
仙童
05+
TO-251
5000
原裝進口
 詢價
FAI
24+
108300
詢價
FAIRCHILD
23+
TO-251
9526
詢價
HAR
17+
TO-251
6200
詢價
Fairchild
23+
I-PAK(TO-251AA)
7750
全新原裝優(yōu)勢
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FSC
23+
TO-252
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
FAIRCHILDSEM
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價
更多RFD14N05供應商 更新時間2025-3-22 11:13:00

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