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RFD14N05SM

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05SM

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05SM

N-channel Enhancement Mode Power MOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFD14N05SM9A

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05SM9A

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD14N05SM9A

N-channel Enhancement Mode Power MOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFP14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP14N05L

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

RFP14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS

Intersil

Intersil Corporation

RFP14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFP14N05L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPD14N05

SIPMOSPowerTransistor

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

SPU14N05

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPU14N05

SIPMOSPowerTransistor

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

詳細參數

  • 型號：

    RFD14N05SM

  • 功能描述：

    MOSFET TO-252AA N-Ch Power

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO-252
260
只做原廠渠道 可追溯貨源
 詢價
onsemi(安森美)
23+
TO-252
7845
支持大陸交貨,美金交易。原裝現貨庫存。
 詢價
ON/安森美
24+
TO-252
505348
免費送樣原盒原包現貨一手渠道聯系
 詢價
24+
N/A
1320
詢價
Fairchild
23+
TO-252
7750
全新原裝優(yōu)勢
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRCHI
23+
TO-252
8650
受權代理!全新原裝現貨特價熱賣!
 詢價
FAIRCHILD
22+23+
TO252
35559
絕對原裝正品全新進口深圳現貨
 詢價
FAIRCHIL
24+
TO-252
90000
一級代理商進口原裝現貨、價格合理
 詢價
FSC/ON
23+
原包裝原封 □□
13170
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
 詢價
更多RFD14N05SM供應商 更新時間2024-12-26 15:00:00

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