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PHB11N50E

PowerMOS transistors Avalanche energy rated

VDSS=500V ID=10.4A RDS(ON)≤0.6? GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N50E

PowerMOS transistors Avalanche energy rated

VDSS=500V ID=10.4A RDS(ON)≤0.6? GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N50E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP11N50E

PowerMOStransistorsAvalancheenergyrated

VDSS=500V ID=10.4A RDS(ON)≤0.6? GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHW11N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHW11N50E

PowerMOStransistorsAvalancheenergyrated

VDSS=500V ID=10.4A RDS(ON)≤0.6? GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHW11N50E

PowerMOStransistorsAvalancheenergyrated

VDSS=500V ID=10.4A RDS(ON)≤0.6? GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PSM11N50CT

11.6A500VSingleN??hannelPowerMOSFET

PFC

PFC Device Inc.

SIF11N50E

N-CHANNELPOWERMOSFET

SISEMICShenzhen SI Semiconductors Co.,LTD.

深愛半導(dǎo)體深圳深愛半導(dǎo)體股份有限公司

SIHFB11N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFB11N50A

N-Channel650V(D-S)SuperJunctionPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SIHFS11N50A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SiHFS11N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFS11N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFS11N50A

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SIHFS11N50A

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFS11N50ATL

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFSL11N50A

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SiHFSL11N50A

RepetitiveAvalancheRated

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SSFP11N50

StarMOSTPowerMOSFET

Good-Ark

GOOD-ARK Electronics

詳細(xì)參數(shù)

  • 型號：

    PHB11N50E

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    PowerMOS transistors Avalanche energy rated

供應(yīng)商型號品牌批號封裝庫存備注價格
PHILIPS/飛利浦
24+
TO-263
20000
只做原廠渠道 可追溯貨源
 詢價
NXP
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
PHILIPS
2020+
SOT404(D2PAK)
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
日本NEC
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
PHILIPS
08+
TO-263
20000
普通
 詢價
PHILIPS
21+
TO-263
30490
原裝現(xiàn)貨庫存
 詢價
N
23+
SOT404(D
10000
公司只做原裝正品
 詢價
PHILIPS/飛利浦
2022+
TO-263
20000
原廠代理 終端免費提供樣品
 詢價
PHILIPS
23+
TO-263
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價
PHILIPS/飛利浦
21+
TO-263
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
更多PHB11N50E供應(yīng)商 更新時間2024-12-25 11:04:00

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