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PHD21N06LT

N-channelTrenchMOS?transistorLogiclevelFET

FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- ?d.c.tod.c.converters ?swi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PHD21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHD21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP21N06

TrenchMOSOtransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP21N06

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP21N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP21N06LT

N-channelTrenchMOS?transistorLogiclevelFET

FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- ?d.c.tod.c.converters ?swi

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PHP21N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP21N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications: ?d.c.tod.c.co

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP21N06T

TrenchMOSOtransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

STP21N06L

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.065? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP21N06LFI

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.065? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號：

    PHB21N06TT/R

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 21A I(D) | SOT-404

供應(yīng)商型號品牌批號封裝庫存備注價格
PH
23+24
TO-263
59630
主營原裝MOS,二三級管,肖特基,功率場效應(yīng)管
 詢價
NXP
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
NXP
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NXP
18+
TO-263
41200
原裝正品,現(xiàn)貨特價
 詢價
PHILIPS
2023+
TO-263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
PHILIPS
24+
TO-263
35200
一級代理/放心采購
 詢價
JINGDAO/晶導(dǎo)微
23+
SMC
69820
終端可以免費供樣,支持BOM配單!
 詢價
PHILIPS
08+
TO-263
20000
普通
 詢價
NXP/恩智浦
23+
TO-263
10000
公司只做原裝正品
 詢價
NXP/恩智浦
TO-263
22+
6000
十年配單,只做原裝
 詢價
更多PHB21N06TT/R供應(yīng)商 更新時間2025-1-12 10:18:00

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