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PHB130N03T

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSO130N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSZ130N03LSG

OptiMOS??Power-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSZ130N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PHB130N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP130N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP130N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

RLW130N03

N-Channel30V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RMW130N03

N-Channel30V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RMW130N03

4.5VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RQA130N03

4VDriveNchMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSS130N03

Switching(30V,13A)

●Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). ●Application Powerswitching,DC/DCconverter. ●Structure SiliconN-channel MOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSS130N03FRA

Nch30V13APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSS130N03HZG

Nch30V13APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    PHB130N03T

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    TrenchMOS transistor Standard level FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
PHILIPS/飛利浦
24+
TO-263
20000
只做原廠渠道 可追溯貨源
 詢價(jià)
24+
3000
公司存貨
 詢價(jià)
PHI
23+
8890
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
PHI
03+
400
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價(jià)
NXP
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
PHILIPS
2023+
TO-263
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
PHILIPS
24+
SOT404(D2PAK)
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
 詢價(jià)
RENESAS/瑞薩
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
PHILIPS
08+
TO-263
20000
普通
 詢價(jià)
PHILIPS
21+
TO-263
30490
原裝現(xiàn)貨庫存
 詢價(jià)
更多PHB130N03T供應(yīng)商 更新時(shí)間2025-1-12 11:04:00

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