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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
PD55003-E	文件：468.27 Kbytes Page：29 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003-E	文件：473.99 Kbytes Page：29 Pages	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003-E	文件：100 bytes Page：1 Pages	包裝：散裝封裝/外殼：PowerSO-10 裸露底部焊盤類別：分立半導(dǎo)體產(chǎn)品晶體管 - FET，MOSFET - 射頻描述：FET RF 40V 500MHZ PWRSO10	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003-E_V01	文件：473.99 Kbytes Page：29 Pages	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003-E-E	文件：468.27 Kbytes Page：29 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003L	文件：288.66 Kbytes Page：5 Pages	HFto2000MHzClassABCommonSource-PowerSO-10RF HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
PD55003L	文件：134.09 Kbytes Page：13 Pages	RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003L-E	文件：200.65 Kbytes Page：19 Pages	RFPOWERTRANSISTORTheLdmoSTPlasticFAMILY Description ThePD55003L-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplication.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003L-Eboaststheexcelle	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003S	文件：309.94 Kbytes Page：19 Pages	RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY DESCRIPTION ThePD55003isacommonsourceN-Channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellentg	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003S-E	文件：473.99 Kbytes Page：29 Pages	RFpowertransistorfromtheLdmoSTplasticfamilyofN-channelenhancement-modelateralMOSFETs Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003S-E-E	文件：468.27 Kbytes Page：29 Pages	RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003STR-E	文件：468.27 Kbytes Page：29 Pages	RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003STR-E	文件：473.99 Kbytes Page：29 Pages	RFpowertransistorfromtheLdmoSTplasticfamilyofN-channelenhancement-modelateralMOSFETs Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003TR-E	文件：473.99 Kbytes Page：29 Pages	RFpowertransistorfromtheLdmoSTplasticfamilyofN-channelenhancement-modelateralMOSFETs Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
PD55003TR-E	文件：468.27 Kbytes Page：29 Pages	RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
QM55003	文件：775.44 Kbytes Page：25 Pages	Mid-BandLow-BandNB-IoTTxM	QORVO Qorvo, Inc	QORVO
QM55003DK	文件：775.44 Kbytes Page：25 Pages	Mid-BandLow-BandNB-IoTTxM	QORVO Qorvo, Inc	QORVO
QM55003PCK	文件：775.44 Kbytes Page：25 Pages	Mid-BandLow-BandNB-IoTTxM	QORVO Qorvo, Inc	QORVO
QM55003SB	文件：775.44 Kbytes Page：25 Pages	Mid-BandLow-BandNB-IoTTxM	QORVO Qorvo, Inc	QORVO
QM55003SQ	文件：775.44 Kbytes Page：25 Pages	Mid-BandLow-BandNB-IoTTxM	QORVO Qorvo, Inc	QORVO

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產(chǎn)品屬性

產(chǎn)品編號(hào)：
PD55003-E
制造商：
STMicroelectronics
類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻
包裝：
散裝
晶體管類型：
LDMOS
頻率：
500MHz
增益：
17dB
額定電流（安培）：
2.5A
功率 - 輸出：
3W
封裝/外殼：
PowerSO-10 裸露底部焊盤
供應(yīng)商器件封裝：
10-PowerSO
描述：
FET RF 40V 500MHZ PWRSO10

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	PD55003-E	STMicroelectronics	24+	PowerSO-10 裸露底部焊盤	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
中科國(guó)際電子(深圳)有限公司	PD55003-E	ST/意法	22+	SMDQFP	26580	原廠原裝現(xiàn)貨	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	PD55003-E	ST	23+		1688	房間現(xiàn)貨庫(kù)存:QQ:373621633	詢價(jià)
深圳市豪邁興電子有限公司	PD55003-E	ST(意法)	2304+	PowerSO-10 裸露底部焊盤	5114	只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣原裝現(xiàn)貨	詢價(jià)
深圳市廣百利電子有限公司	PD55003-E	ST(意法)	24+	PowerSO-10 裸露底部焊盤	18500	全網(wǎng)低價(jià),原裝原包	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	PD55003-E	ST	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	PD55003-E	ST	24+	PowerSO-10	484		詢價(jià)
深圳市博浩通科技有限公司	PD55003-E	STMicro.	23+	PowerSO-10RF	7750	全新原裝優(yōu)勢(shì)	詢價(jià)
深圳市振宏微科技有限公司	PD55003-E	ST	23+	原廠封裝	13528	振宏微原裝正品,假一罰百	詢價(jià)
深圳市納艾斯科技有限公司	PD55003-E	ST	2018+	NA	6000	全新原裝正品現(xiàn)貨,假一賠佰	詢價(jià)

更多PD55003-E供應(yīng)商更新時(shí)間2024-12-30 22:27:00

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