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PD57006-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesofupto1GHz.PD57006boaststheexcellentga

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006-E

包裝：帶 封裝/外殼：PowerSO-10RF 裸露底部焊盤（2 條成形引線） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 945MHZ PWRSO-10

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006-E_10

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006S

RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006S-E

RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006S-E

RFPOWERtransistor,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs

Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesofupto1GHz.PD57006boaststheexcellentga

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006STR-E

RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006STR-E

RFPOWERtransistor,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs

Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesofupto1GHz.PD57006boaststheexcellentga

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006TR-E

RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

PD57006TR-E

RFPOWERtransistor,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs

Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat28Vincommonsourcemodeatfrequenciesofupto1GHz.PD57006boaststheexcellentga

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號：

    PD57006-E

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻

  • 包裝：

    帶

  • 晶體管類型：

    LDMOS

  • 頻率：

    945MHz

  • 增益：

    15dB

  • 額定電流（安培）：

    1A

  • 功率 - 輸出：

    6W

  • 封裝/外殼：

    PowerSO-10RF 裸露底部焊盤（2 條成形引線）

  • 供應(yīng)商器件封裝：

    PowerSO-10RF（成形引線）

  • 描述：

    FET RF 65V 945MHZ PWRSO-10

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
2024+
PowerSO-10RF
32560
原裝優(yōu)勢絕對有貨
 詢價
ST
10+
5000
原裝現(xiàn)貨價格有優(yōu)勢量多可發(fā)貨
 詢價
ST
24+
PowerSO-10
203
詢價
STMicro.
23+
PowerSO-10RF
7750
全新原裝優(yōu)勢
 詢價
ST
1645+
?
7500
只做原裝進(jìn)口,假一罰十
 詢價
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
STM
2021+
N/A
6800
只有原裝正品
 詢價
STMICROEL
2018+
SMD
5500
長期供應(yīng)原裝現(xiàn)貨實單可談
 詢價
ST
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價
ST/意法
21+
65230
詢價
更多PD57006-E供應(yīng)商 更新時間2024-11-5 15:43:00

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