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PD55003S-E

RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind

STMICROELECTRONICSSTMicroelectronics

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PD55003S-E

包裝：托盤 封裝/外殼：PowerSO-10 裸露底部焊盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 40V 500MHZ PWRSO10

STMICROELECTRONICSSTMicroelectronics

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PD55003S-E-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent

STMICROELECTRONICSSTMicroelectronics

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PD55003STR-E

RFpowertransistorfromtheLdmoSTplasticfamilyofN-channelenhancement-modelateralMOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD55003STR-E

RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs

Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent

STMICROELECTRONICSSTMicroelectronics

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PD55003TR-E

RFpowertransistorfromtheLdmoSTplasticfamilyofN-channelenhancement-modelateralMOSFETs

Features ■Excellentthermalstability ■Commonsourceconfiguration ■POUT=3Wwith17dBgain@500MHz/12.5V Description ThePD55003-EisacommonsourceN-channel, enhancement-modelateralfield-effectRFpower transistor.Itisdesignedforhighgain,broadband commercialandind

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD55003TR-E

RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs

Description ThePD55003-EisacommonsourceN-channel,enhancement-modelateralField-EffectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat12Vincommonsourcemodeatfrequenciesofupto1GHz.PD55003boaststheexcellent

STMICROELECTRONICSSTMicroelectronics

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QM55003

Mid-BandLow-BandNB-IoTTxM

QORVO

Qorvo, Inc

QM55003DK

Mid-BandLow-BandNB-IoTTxM

QORVO

Qorvo, Inc

QM55003PCK

Mid-BandLow-BandNB-IoTTxM

QORVO

Qorvo, Inc

QM55003SB

Mid-BandLow-BandNB-IoTTxM

QORVO

Qorvo, Inc

QM55003SQ

Mid-BandLow-BandNB-IoTTxM

QORVO

Qorvo, Inc

QM55003SR

Mid-BandLow-BandNB-IoTTxM

QORVO

Qorvo, Inc

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    PD55003S-E

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻

  • 包裝：

    托盤

  • 晶體管類型：

    LDMOS

  • 頻率：

    500MHz

  • 增益：

    17dB

  • 額定電流（安培）：

    2.5A

  • 功率 - 輸出：

    3W

  • 封裝/外殼：

    PowerSO-10 裸露底部焊盤

  • 供應(yīng)商器件封裝：

    PowerSO-10RF（直引線）

  • 描述：

    FET RF 40V 500MHZ PWRSO10

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STMicroelectronics
24+
PowerSO-10 裸露底部焊盤
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ST
23+
1688
房間現(xiàn)貨庫存:QQ:373621633
 詢價(jià)
ST
24+
PowerSO-10
496
詢價(jià)
STMicro.
23+
PowerSO-10RF
7750
全新原裝優(yōu)勢
 詢價(jià)
ST
1708+
?
14860
只做原裝進(jìn)口,假一罰十
 詢價(jià)
ST
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價(jià)
STM
1809+
SOP-10
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ST
22+
NA
66900
原廠原裝現(xiàn)貨
 詢價(jià)
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
更多PD55003S-E供應(yīng)商 更新時(shí)間2024-12-29 14:13:00

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