零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PBRN123ES | NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | |
PBRN123ES | NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k? | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | |
包裝:卷帶(TR) 封裝/外殼:TO-226-3,TO-92-3(TO-226AA)成形引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預(yù)偏置 描述:TRANS PREBIAS NPN 0.7W TO92-3 | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k? | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
NPN800mA,40VBISSRETs;R1=2.2k??R2=10k? | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
NPN800mA,40VBISSRETs;R1=2.2k??R2=10k? | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
NPN800mA,40VBISSRETs;R1=2.2k??R2=10k? | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
NPN800mA,40VBISSRETs;R1=2.2k??R2=10k? | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ 1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
PNP800mA,40VBISSRET;R1=2.2kW,R2=2.2kW | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ 1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA |
詳細(xì)參數(shù)
- 型號:
PBRN123ES
- 制造商:
PHILIPS
- 制造商全稱:
NXP Semiconductors
- 功能描述:
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?, R2 = 2.2 k?
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
21+ |
NA |
10000 |
原裝熱賣可訂貨 |
詢價 | |||
NXP/恩智浦 |
1535+ |
10000 |
詢價 | ||||
PHILIPS |
2023+ |
SMD |
16000 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價 | ||
NXP/恩智浦 |
23+ |
10000 |
全新原裝,歡迎來電咨詢 |
詢價 | |||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
NXP USA Inc. |
2022+ |
TO-92-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
NXP USA Inc. |
24+ |
TO-226-3 TO-92-3(TO-226AA) |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
Nexperia/安世 |
22+ |
SOT23 |
210000 |
原廠原裝正品現(xiàn)貨 |
詢價 | ||
NEXPERIA/安世 |
2021+ |
SOT23 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NEXPERIA |
21+ |
SOT-23 |
6000 |
原裝正品 |
詢價 |
相關(guān)規(guī)格書
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