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PBRN123ES

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 2.2 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ES

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123ES,126

包裝:卷帶(TR) 封裝/外殼:TO-226-3,TO-92-3(TO-226AA)成形引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預(yù)偏置 描述:TRANS PREBIAS NPN 0.7W TO92-3

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123ET

NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123ET

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123Y_SER

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YK

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123YK

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YS

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123YS

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT

NPN800mA,40VBISSRETs;R1=2.2k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123YT

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT

40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP123ET

PNP800mA,40VBISSRET;R1=2.2kW,R2=2.2kW

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRP123ET

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    PBRN123ES

  • 制造商:

    PHILIPS

  • 制造商全稱:

    NXP Semiconductors

  • 功能描述:

    NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?, R2 = 2.2 k?

供應(yīng)商型號品牌批號封裝庫存備注價格
21+
NA
10000
原裝熱賣可訂貨
詢價
NXP/恩智浦
1535+
10000
詢價
PHILIPS
2023+
SMD
16000
安羅世紀(jì)電子只做原裝正品貨
詢價
NXP/恩智浦
23+
10000
全新原裝,歡迎來電咨詢
詢價
NXP
22+
NA
45000
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
NXP USA Inc.
2022+
TO-92-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
NXP USA Inc.
24+
TO-226-3 TO-92-3(TO-226AA)
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
Nexperia/安世
22+
SOT23
210000
原廠原裝正品現(xiàn)貨
詢價
NEXPERIA/安世
2021+
SOT23
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
NEXPERIA
21+
SOT-23
6000
原裝正品
詢價
更多PBRN123ES供應(yīng)商 更新時間2024-11-19 10:00:00