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PBRP123YT-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturatio

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PC123

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

PC123

EuropeanSafetyStandardApprovedTypeLongCreepageDistancePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

PC123A

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

PC123B

DIP4pinReinforcedInsulationTypePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

PC123F

EuropeanSafetyStandardApprovedTypeLongCreepageDistancePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

PC123Y

COLOURTELEVISION

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

PCE-123

ProcessCalibratorPCE-123

PCE

PCE Instruments.

PCHC123H

PowerChokeHighCurrent

ALLIED

Allied Components International

PCHC123HP

PowerChokeHighCurrent

ALLIED

Allied Components International

PDTA123E

PNPresistor-equippedtransistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA123E

PNPresistor-equippedtransistors;R1=2.2k廓,R2=2.2k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA123E

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA123E_SER

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA123E_SER

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA123E_SERIES

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA123EE

PNPresistor-equippedtransistors

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTA123EE

PNPresistor-equippedtransistors;R1=2.2k廓,R2=2.2k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTA123EE

NPNresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA123EE

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    PBRP123YT T/R

  • 功能描述：

    開關(guān)晶體管 - 偏壓電阻器 BISS RET

  • RoHS：

    否

  • 制造商：

    ON Semiconductor

  • 晶體管極性：

    NPN/PNP

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    直流集電極/Base Gain hfe

  • Min：

    200 mA

  • 最大工作頻率：

    集電極—發(fā)射極最大電壓

  • VCEO：

    50 V

  • 集電極連續(xù)電流：

    150 mA

  • 功率耗散：

    200 mW

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP
SOT-23-3
3000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
NXP/恩智浦
24+23+
SOT-23-3
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
 詢價
NXP/恩智浦
SOT-23-3
90000
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
NEXPERIA
1809+
SOT23-3
6675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Nexperia
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
Nexperia USA Inc.
24+
TO-236-3 SC-59 SOT-23-3
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
SK/森浦科
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
SK/森浦科
2022
SOT-23
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
Hammond
2020+
N/A
155
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
Hammond
22+
NA
155
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
更多PBRP123YT T/R供應(yīng)商 更新時間2024-11-19 10:31:00

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