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OPI113

OPTICALLY COUPLED ISOLATORS

Description: EachOptoisolatorinthisdatasheetcontainsaninfraredLightEmittingDiode(LED)andaNPNsiliconPhotosensor.TheOPI110andOPI1264deviceshave890nmLightEmittingDiode(LED)andNPNphototransistorsensor,whereastheOP113hasa890nmLEDandaphotodarlingtonsensor.T

Optek

OPTEK Technologies

OPI113

Optically Coupled Isolator

Optek

OPTEK Technologies

PBRN113E

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113E

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113E_SER

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113ET

40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ET-Q

40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113Z

NPN800mA,40VBISSRETs;R1=1k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113Z

NPN800mA,40VBISSRETs;R1=1kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113Z_SER

NPN800mA,40VBISSRETs;R1=1kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ZK

NPN800mA,40VBISSRETs;R1=1k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113ZK

NPN800mA,40VBISSRETs;R1=1kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBRN113ZS

NPN800mA,40VBISSRETs;R1=1k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBRN113ZS

NPN800mA,40VBISSRETs;R1=1kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號：

    OPI113

  • 功能描述：

    晶體管輸出光電耦合器 Optoisolator

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 輸入類型：

    DC

  • 最大集電極/發(fā)射極電壓：

    70 V

  • 最大集電極/發(fā)射極飽和電壓：

    0.4 V

  • 絕緣電壓：

    5300 Vrms

  • 電流傳遞比：

    100 % to 200 %

  • 最大正向二極管電壓：

    1.65 V

  • 最大輸入二極管電流：

    60 mA

  • 最大集電極電流：

    100 mA

  • 最大功率耗散：

    100 mW

  • 最大工作溫度：

    + 110 C

  • 最小工作溫度：

    - 55 C

  • 封裝/箱體：

    DIP-4

  • 封裝：

    Bulk

供應商型號品牌批號封裝庫存備注價格
Optek (TT Electronics)
2022+
1
全新原裝 貨期兩周
 詢價
N/A
24+
DIP-6
5000
自己現(xiàn)貨
 詢價
TT
20+
SMD
968
就找我吧!--邀您體驗愉快問購元件!
 詢價
TT Electronics/Optek Technolog
23+/24+
原廠封裝
8600
只供原裝進口公司現(xiàn)貨+可訂貨
 詢價
24+
N/A
69000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
OPTEK
23+
52000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
BOT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
-
2023+
DIP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
SMD
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
TT ELECTRONICS
21+
標準封裝
83
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號
 詢價
更多OPI113供應商 更新時間2024-12-26 9:50:00

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