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PBRN113E

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113E

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 1 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113E_SER

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113EK

Marking：G1；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113ES

Marking：N113ES；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113ET

Marking：7G；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113ET

Marking：7G；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113ET-Q

Marking：7G；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113EK

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 1 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ES

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 1 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    PBRN113E

  • 制造商：

    PHILIPS

  • 制造商全稱(chēng)：

    NXP Semiconductors

  • 功能描述：

    NPN 800 mA, 40 V BISS RETs; R1 = 1 k?, R2 = 1 k?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NXP
24+
6000
詢(xún)價(jià)
Nexperia
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢(xún)價(jià)
Nexperia/安世
22+
SOT23
210000
原廠原裝正品現(xiàn)貨
 詢(xún)價(jià)
NEXPERIA/安世
24+
NA
12000
原裝現(xiàn)貨,專(zhuān)業(yè)配單專(zhuān)家
 詢(xún)價(jià)
TI/德州儀器
23+
MSOP8
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢(xún)價(jià)
Nexperia(安世)
2447
SOT-23
115000
3000個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
 詢(xún)價(jià)
NEXPERIA
1809+
SOT23-3
6675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
NXP
23+
SOT-423
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
NXP
22+
NA
45000
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
 詢(xún)價(jià)
NEXPERIA/安世
22+
SOT-23
50000
原裝正品.假一罰十
 詢(xún)價(jià)
更多PBRN113E供應(yīng)商 更新時(shí)間2025-3-20 15:30:00

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