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NP80N055MHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP80N055MHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N055MHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055MHE

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055MHE-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N055MHE-S18-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055MHE-S18-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055MLE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055MLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2900

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055MLE

SWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NP80N055MHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NXP/恩智浦
23+
SO-8
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
RENESAS/瑞薩
2022+
TO-220
32500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
RENESAS/瑞薩
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
RENESAS/瑞薩
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
RENESAS/瑞薩
22+
TO-220
12500
瑞薩全系列在售,終端可出樣品
 詢價(jià)
RENESAS/瑞薩
20+
TO-220
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
RENESAS/瑞薩
22+
TO-220
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
Renesas Electronics America
2022+
TO-220-3
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
R
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
R
2020+
T0-220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
更多NP80N055MHE供應(yīng)商 更新時(shí)間2025-3-24 11:51:00

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