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NP80N055NHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055NHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N055NHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=11mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2400pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=40A) RDS(on)3=15mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2900

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055NLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=11mΩMAX.(VGS=10V,ID=40A) RDS(on)2=13mΩMAX.(VGS=5V,ID=4

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055NLE

SWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N055NLE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055PDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N055PDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N055MDG,NP80N055NDG,andNP80N055PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N055MDG,NP80N055NDG RDS(on)1=6.9mΩMAX.(VGS=10V,ID=40A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數

  • 型號：

    NP80N055CHE

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-220AB

供應商型號品牌批號封裝庫存備注價格
NEC
24+
TO-220AB
8866
詢價
NEC
6000
面議
19
TO-220AB
 詢價
VB
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價
NEC
2022+
TO-220AB
12888
原廠代理 終端免費提供樣品
 詢價
R
23+
TO-220
6000
原裝正品，支持實單
 詢價
R
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
R
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
NEC
23+
TO-252
9500
專業(yè)優(yōu)勢供應
 詢價
VBSEMI/臺灣微碧
23+
TO-220AB
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VBsemi
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多NP80N055CHE供應商 更新時間2025-4-4 15:30:00

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