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NP80N04NDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N04MDG,NP80N04NDG,andNP80N04PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N04MDG,NP80N04NDG RDS(on)1=4.8mΩMAX.(VGS=10V,ID=40A) R

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NDG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NDG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP80N04MDG,NP80N04NDG,andNP80N04PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N04MDG,NP80N04NDG RDS(on)1=4.8mΩMAX.(VGS=10V,ID=40A) R

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04NHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N04MLG,NP80N04NLG,andNP80N04PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N04MLG,NP80N04NLG RDS(on)1=4.8mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NUG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N04NUGandNP80N04PUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance -NP80N04NUG RDS(on)=4.8mΩMAX.(VGS=10V,ID=40A) -NP80N04PUG RDS(on

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NP80N04NDG

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
22+
TO-262
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
22+
TO-262
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
RENESAS/瑞薩
22+
TO-220
6000
十年配單,只做原裝
 詢價
RENESAS/瑞薩
23+
TO-220
6000
原裝正品，支持實單
 詢價
RENESAS(瑞薩)/IDT
23+
TO262
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
 詢價
RENESAS/瑞薩
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
NEC
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價
RENESAS/瑞薩
23+
TO-262
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價
APEC/富鼎
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
更多NP80N04NDG供應(yīng)商 更新時間2025-3-25 12:22:00

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