首頁 >NP60N04VLK>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NP60N04VLK | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
NP60N04VLK | 40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP60N04VLK | N-channel Power MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
40 V – 60 A – N-channel Power MOS FET Application: Automotive Description TheNP60N04VLKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedfor | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-channel Power MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-channel Power MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP60N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.85mΩMAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2450pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
40VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
40VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
40VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
40VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
N-ChannelEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-channelEnhancedmodeDFN5*6MOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
40VN-CHANNELENHANCEMENTMODEMOSFET Application Batteryprotection Loadswitch Uninterruptiblepowersupply | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | ||
40VN-CHANNELENHANCEMENTMODEMOSFET Application Batteryprotection Loadswitch Uninterruptiblepowersupply | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
23+ |
TO-252 |
30000 |
專業(yè)供應MOS/LDO/晶體管/有大量價格低 |
詢價 | ||
Renesas |
19+ |
TO-252 |
87455 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
RENESAS/瑞薩 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
RENESAS/瑞薩 |
21+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
RENESAS/瑞薩 |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
TO-252 |
13012 |
原廠代理 終端免費提供樣品 |
詢價 | ||
RENESAS(瑞薩)/IDT |
23+ |
TO252 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
RENESAS/瑞薩 |
23+ |
NA/ |
16262 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
TO-252 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
RENESAS(瑞薩)/IDT |
23+ |
TO252(MP3ZP) |
6000 |
誠信服務,絕對原裝原盤 |
詢價 |
相關規(guī)格書
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相關庫存
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