首頁 >NP34N055ILE>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NP34N055ILE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP34N055ILE | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
SWITCHING N-CHANNEL POWER MOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=18mΩMAX.(VGS=10V,ID=17A) RDS(on)2 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細參數
- 型號:
NP34N055ILE
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 34A I(D) | TO-252AA
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEC |
17+ |
TO-252 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
NXP |
20+ |
TO-252 |
63258 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
N |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價 | ||
NXP/恩智浦 |
23+ |
TO-252 |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
VB |
21+ |
TO-252 |
10000 |
原裝現貨假一罰十 |
詢價 | ||
NXP/恩智浦 |
2022 |
TO-252 |
80000 |
原裝現貨,OEM渠道,歡迎咨詢 |
詢價 | ||
NXP |
TO-252 |
68900 |
原包原標簽100%進口原裝常備現貨! |
詢價 | |||
N |
23+ |
TO-252 |
6000 |
原裝正品,支持實單 |
詢價 | ||
NXP/恩智浦 |
新年份 |
TO-252 |
33288 |
原裝正品現貨,實單帶TP來談! |
詢價 | ||
NXP/恩智浦 |
TO-252 |
90000 |
集團化配單-有更多數量-免費送樣-原包裝正品現貨-正規(guī) |
詢價 |
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