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MUR410-LFR

4AFASTEFFICIENTRECTIFIER

4AFASTEFFICIENTRECTIFIER FEATURES LOWPOWERLOSS,HIGHEFFICIENCY LOWLEAKAGE LOWFORWARDVOLTAGEDROP HIGHCURRENTCAPABILITY HIGHSPEEDSWITCHING HIGHRELIABILITY HIGHCURRENTSURGE GLASSPASSIVATEDCHIPJUNCTION ROHS

FRONTIER

Frontier Electronics

MUR410PT

HIGHEFFICIENCYRECTIFIER

CHENMKOchenmko

力勤股份有限公司

MUR410RL

SWITCHMODETMPowerRectifiers

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MUR410RLG

SWITCHMODETMPowerRectifiers

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MUR410RLG

SWITCHMODEPowerRectifiers

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MUR410RLG

Switch-ModePowerRectifiers

Thesestate?of?the?artdevicesareaseriesdesignedforusein switchingpowersupplies,invertersandasfreewheelingdiodes. Features ?Ultrafast25ns,50nsand75nsRecoveryTimes ?175°COperatingJunctionTemperature ?LowForwardVoltage ?LowLeakageCurrent ?HighTemperatureG

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MURC410

MURC405-MURC460UltrafastSiliconDie

SENSITRON

Sensitron

MURS410

SURFACEMOUNTSUPERFASTRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達半導體深圳辰達半導體有限公司

MURS410

SurfaceMountRectifiers

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MURS410

SURFACEMOUNTRECTIFIERS

DSK

Diode Semiconductor Korea

MURS410

4.0ASURFACEMOUNTULTRAFASTDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

NBB-410

BiasSchemeforNBB-SeriesAmplifiers

Introduction RFMD’sNBB-seriesamplifiersaremonolithicintegratedcircuits(ICs)usingInGaP/GaAsHBTtechnology.TheNBB-seriesusesaDarlington-pairtransistorconfigurationwithbiasandfeedbackresistorsproperlyselectedtodeterminethegain,inputandoutputmatchandbias(bothvoltag

RFMD

RF Micro Devices

NDB410A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NDB410A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDB410AE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NDB410AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDB410B

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NDB410B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDB410BE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NDB410BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Micro Commercial Co
24+
DO-201AD
9350
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Micro
1942+
N/A
908
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MICRO
1809+
DO-201
3675
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ON/安森美
23+
DO201
2500
全新原裝正品現(xiàn)貨,支持訂貨
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ON/安森美
07+
DO201
2500
詢價
ON/安森美
2022+
DO201
2500
原廠原裝,假一罰十
 詢價
ON/安森美
2122+
SURMETIC
98800
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mot
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
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ON
23+
DO201AD
5000
原裝正品,假一罰十
 詢價
ON
23+
DO201AD
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
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更多MUR410GP-AP供應(yīng)商 更新時間2024-11-5 10:53:00

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