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NBB-410

Bias Scheme for NBB-Series Amplifiers

Introduction RFMD’sNBB-seriesamplifiersaremonolithicintegratedcircuits(ICs)usingInGaP/GaAsHBTtechnology.TheNBB-seriesusesaDarlington-pairtransistorconfigurationwithbiasandfeedbackresistorsproperlyselectedtodeterminethegain,inputandoutputmatchandbias(bothvoltag

RFMD

RF Micro Devices

NDB410A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB410A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB410AE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB410AE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB410B

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB410B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB410BE

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB410BE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP410A

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    NBB-410

  • 制造商：

    RFMD

  • 制造商全稱：

    RF Micro Devices

  • 功能描述：

    Bias Scheme for NBB-Series Amplifiers

供應(yīng)商型號品牌批號封裝庫存備注價格
Pepperl + Fuchs
24+
con
4000
優(yōu)勢庫存,原裝正品
 詢價
Pepperl + Fuchs
2022+
1
全新原裝 貨期兩周
 詢價
PEPPERL+FUCHS
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
PEPPERL+FUCHS
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
Eaton
22+
NA
168
加我QQ或微信咨詢更多詳細信息,
 詢價
MINI
24+
SMD
3600
MINI專營品牌全新原裝正品假一賠十
 詢價
ICGAINBLOCDC-4GHZ
24+
847
詢價
RFMD
2017+
SMD
1585
只做原裝正品假一賠十!
 詢價
RFMD
24+
NA
2041
進口原裝正品優(yōu)勢供應(yīng)
 詢價
RFMD
18+
SMT76
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
更多NBB-410供應(yīng)商 更新時間2025-3-19 9:00:00

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