首頁 >MUR410-LFR>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MUR410-LFR | 4A FAST EFFICIENT RECTIFIER 4AFASTEFFICIENTRECTIFIER FEATURES LOWPOWERLOSS,HIGHEFFICIENCY LOWLEAKAGE LOWFORWARDVOLTAGEDROP HIGHCURRENTCAPABILITY HIGHSPEEDSWITCHING HIGHRELIABILITY HIGHCURRENTSURGE GLASSPASSIVATEDCHIPJUNCTION ROHS | FRONTIER Frontier Electronics | FRONTIER | |
HIGHEFFICIENCYRECTIFIER | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
SWITCHMODETMPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SWITCHMODETMPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SWITCHMODEPowerRectifiers | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Switch-ModePowerRectifiers Thesestate?of?the?artdevicesareaseriesdesignedforusein switchingpowersupplies,invertersandasfreewheelingdiodes. Features ?Ultrafast25ns,50nsand75nsRecoveryTimes ?175°COperatingJunctionTemperature ?LowForwardVoltage ?LowLeakageCurrent ?HighTemperatureG | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MURC405-MURC460UltrafastSiliconDie | SENSITRON Sensitron | SENSITRON | ||
SURFACEMOUNTSUPERFASTRECTIFIER | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司 | CHENDA | ||
SurfaceMountRectifiers | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
SURFACEMOUNTRECTIFIERS | DSK Diode Semiconductor Korea | DSK | ||
4.0ASURFACEMOUNTULTRAFASTDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣諾電子淄博圣諾電子工程有限公司 | ZSELEC | ||
BiasSchemeforNBB-SeriesAmplifiers Introduction RFMD’sNBB-seriesamplifiersaremonolithicintegratedcircuits(ICs)usingInGaP/GaAsHBTtechnology.TheNBB-seriesusesaDarlington-pairtransistorconfigurationwithbiasandfeedbackresistorsproperlyselectedtodeterminethegain,inputandoutputmatchandbias(bothvoltag | RFMD RF Micro Devices | RFMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
mot |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
ON |
23+ |
DO201AD |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ON |
23+ |
DO201AD |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
ON |
22+23+ |
DO201AD |
16826 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
ON |
19+ |
DO201AD |
30000 |
原裝正品,價格優(yōu) |
詢價 | ||
ON |
20+ |
38500 |
全新現(xiàn)貨熱賣中歡迎查詢 |
詢價 | |||
ON |
2020+ |
DO201AD |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
ONSEMI |
23+ |
DO201AD |
90000 |
渠道可追溯 可開增值稅 正規(guī)報關(guān) 絕不損原包裝 |
詢價 | ||
ONSEMI |
22+ |
DO201AD |
20000 |
深圳原裝現(xiàn)貨正品有單價格可談 |
詢價 | ||
ON/安森美 |
2021+ |
DO201AD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
