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MTD6N10

POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate DPAKforSurfaceMountorInsertionMount ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrealydrivers.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD6N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD6N10E

TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD6N10E

Power Field Effect Transistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP6N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP6N10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHD6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP6N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PJD6N10A

100VN-ChannelMOSFET

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJD6N10A

100VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

詳細參數(shù)

  • 型號：

    MTD6N10

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

供應商型號品牌批號封裝庫存備注價格
ON
23+
TO-252
6893
詢價
ON
24+
N/A
2430
詢價
ON
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
M
2020+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
JINGDAO/晶導微
23+
SOD-123FL
69820
終端可以免費供樣,支持BOM配單!
 詢價
ON
24+
T0-252
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
ON
1709+
TO-252/D-PAK
32500
普通
 詢價
MOTOROLA/摩托羅拉
2447
TO-252
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
VBsemi
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多MTD6N10供應商 更新時間2025-4-17 17:14:00

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