MTD6N10E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTD6N10E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
? Replaces MTD5N10
產品屬性
- 型號：
MTD6N10E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VB |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ON/安森美 |
22+ |
SOT252 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
MOTOROLA/摩托羅拉 |
2021+ |
TO-252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
MOTOROLA/摩托羅拉 |
23+ |
SOT-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON/安森美 |
20+ |
現(xiàn)貨很近!原廠很遠!只做原裝 |
32500 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
詢價 | ||
ON |
23+ |
TO-252 |
6893 |
詢價 | |||
ON |
1822+ |
TO-252 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
ON |
SOT-252 |
97399 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ON |
05+ |
原廠原裝 |
76 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
ON |
23+ |
2800 |
正品原裝貨價格低 |
詢價 |
