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MTM10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTV10N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTV10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTW10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTW10N100E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTW10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTY10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerEieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RM10N100LD

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures Vos=100Vl0=10A Rosin)

RECTRON

Rectron Semiconductor

SFF10N100B

10AMP/1000Volts1.2ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    MSAFX10N100A

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    TRANS MOSFET N-CH 10A 3PIN COOLPACK1 - Bulk

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更多MSAFX10N100A供應(yīng)商 更新時(shí)間2025-3-6 14:52:00