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IXFH14N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFH14N100

HiPerFETPowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFH14N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR14N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT14N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFX14N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFX14N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX14N100

HiPerFETPowerMOSFETs

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXTH14N100

IscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.82Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH14N100

MegaMOSTMFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackage JEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols ?Uninterrupti

IXYS

IXYS Corporation

MTY14N100

TMOSPOWERFET14AMPERES1000VOLTSRDS(on)=0.80OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

Motorola

Motorola, Inc

MTY14N100E

PowerFieldEffect

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTY14N100E

TMOSPOWERFET14AMPERES1000VOLTSRDS(on)=0.80OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

Motorola

Motorola, Inc

詳細(xì)參數(shù)

  • 型號(hào)：

    MSAFX14N100A

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    TRANS MOSFET N-CH 14A 3PIN COOLPACK1 - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MSEMHR
2021+
SMD
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
 詢價(jià)
-
23+
NA
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
ITT
ROHS
13352
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長期供貨
 詢價(jià)
Panasonic
2010+
N/A
66
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
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PANASONIC
20+
傳感器
396
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
Panasonic
23+
NA
13826
確保原裝正品,專注終端客戶一站式BOM配單
 詢價(jià)
PANASONIC
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
Panasonic
新
5
全新原裝 貨期兩周
 詢價(jià)
Panasonic
2022+
1
全新原裝 貨期兩周
 詢價(jià)
信盛
24+
connector
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
 詢價(jià)
更多MSAFX14N100A供應(yīng)商 更新時(shí)間2024-11-5 15:00:00

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