首頁 >MSAEZ15N40A>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
15A,400VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC15N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalan | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
N-ChannelMOSFET400V,15A,0.3廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFET400V,15A,0.3廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
StrobeFlashN-ChannelLogicLevelIGBT | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
ElectricalCharacteristicsofIGBT GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
HighInputImpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
HighInputImpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
StrobeFlashN-ChannelLogicLevelIGBT | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410Volts InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
InternallyClampedN-ChannelIGBT InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410Volts InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
InternallyClampedN-ChannelIGBT InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI |
詳細參數(shù)
- 型號：
MSAEZ15N40A
- 制造商：
Microsemi Corporation
- 功能描述：
TRANS MOSFET N-CH 15A 3PIN COOLPACK1 - Bulk
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MASON |
24+ |
ROHS |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
- |
23+ |
NA |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
MSEMHR |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ITT |
ROHS |
13352 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
Panasonic |
2010+ |
N/A |
66 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
PANASONIC |
20+ |
傳感器 |
396 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Panasonic |
23+ |
NA |
13826 |
確保原裝正品,專注終端客戶一站式BOM配單 |
詢價 | ||
PANASONIC |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Panasonic |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
Panasonic |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 |
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