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AGR18060E

60W,1805MHz-1880MHz,LDMOSRFPowerTransistor

Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower

TriQuint

TriQuint Semiconductor

AGR18060EF

60W,1805MHz-1880MHz,LDMOSRFPowerTransistor

Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower

TriQuint

TriQuint Semiconductor

AGR18060EU

60W,1805MHz-1880MHz,LDMOSRFPowerTransistor

Introduction TheAGR18060Eisa60W,26VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforenhanceddataforglobalevolution(EDGE),globalsystemformobilecommunication(GSM),andsinglecarrierormulti-carrierclassABpower

TriQuint

TriQuint Semiconductor

ILSTA18060

SIntegratedLEDTactSwitch

Features/Benefits ?CompactSize ?THTversions ?Differentheight ?SeveralLEDcolors ?Highlifecycles

CK-COMPONENTS

C&K Components

ILSTB18060

SIntegratedLEDTactSwitch

Features/Benefits ?CompactSize ?THTversions ?Differentheight ?SeveralLEDcolors ?Highlifecycles

CK-COMPONENTS

C&K Components

ILSTC18060

SIntegratedLEDTactSwitch

Features/Benefits ?CompactSize ?THTversions ?Differentheight ?SeveralLEDcolors ?Highlifecycles

CK-COMPONENTS

C&K Components

MRF18060A

RFPOWERFIELDEFFECTTRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistorsTheRFMOSFETLine N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassAB

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MRF18060A

RFPowerFieldEffectTransistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLL

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRF18060B

RFPowerFieldEffectTransistor

DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. ?GSMPerformance,FullFre

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MRF18060B

RFPowerFieldEffectTransistors

DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM1930-1990MHz. ?GSMPerformance,FullFrequency

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號(hào):

    MRF18060BST

  • 制造商:

    Motorola Inc

  • 功能描述:

    MOSFET Transistor, N-Channel, SOT-391BVAR

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2789
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23+
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10000
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1200
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8510
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5632
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46
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19960
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更多MRF18060BST供應(yīng)商 更新時(shí)間2025-1-17 15:29:00