AGR18060EF中文資料TriQuint數(shù)據(jù)手冊PDF規(guī)格書

Introduction

The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power amplifier applications. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 60 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications.

Features

Typical EDGE performance:

1880 MHz, 26 V, IDQ = 500 mA

— Output power (POUT): 20 W.

— Power gain: 15 dB.

— Efficiency: 34.

— Modulation spectrum:

@ ±400 kHz = –62 dBc.

@ ±600 kHz = –73 dBc.

— Error vector magnitude (EVM) = 2.

Typical performance over entire GSM band:

— P1dB: 60 W typ.

— Power gain: @ P1dB = 14 dB.

— Efficiency @ P1dB = 52 typical.

— Return loss: –10 dB.

High-reliability, gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continuous wave (CW) output power.

Large signal impedance parameters available.