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MJF3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

MJF3055(NPN) MJF2955(PNP) COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS,30WATTS Specificallydesignedforgeneralpurposeamplifierandswitchingapplications. Features ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopular

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF3055

COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS30WATTS

ComplementarySiliconPowerTransistors ...specificallydesignedforgeneralpurposeamplifierandswitchingapplications. ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopularMJE3055TandMJE2955T ?Collector–EmitterSustainingVoltage—VCEO(sus)90Volts

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJF3055

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF3055G

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT3055E

MEDIUMPOWERTMOSFET1.7AMP60VOLTS

N–ChannelEnhancementMode SiliconGateTMOSE–FET?SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdevicealsooffersadrain–to–sourcediodewithafastrecoverytime

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055E

N-ChannelTMOSE-FETPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT3055EL

MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET? SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055V

TMOSPOWERFET1.7AMPERES60VOLTS

TMOSV?SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055V

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT3055VL

TMOSPOWERFET1.5AMPERES60VOLT

TMOSV?SOT-223forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MMFT3055VL

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMJD3055

SiliconNPNepitaxialplanerTransistors

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MTD3055E

TMOSIVN-ChannelEnhancement-ModePowerFieldEffectTransistorDPAKforSurfaceorInsertionMount

TMOSPOWERFET8AMPERESRDS(on)=0.15OHM60VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055EL

TMOSIVPowerFieldEffectTransistor(N-ChannelEnhancement-ModeSiliconGate)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055V

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features 12A,60V.RDS(ON)=0.15?@VGS=10V Lowgatecharge. Fastswitchingspe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD3055V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50an

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055V

PowerMOSFET12Amps,60Volts

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD3055V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD3055V

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

MTD3055VL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號：

    MJE3055TTU_Q

  • 功能描述：

    兩極晶體管 - BJT

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
FSC
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FSC
1038+
TO220
1000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
FSC
23+
原裝正品現(xiàn)貨
10000
TO220
 詢價
ST/意法
20+
1000
進(jìn)口原裝現(xiàn)貨假一賠萬力挺實單
 詢價
ST/意法
15+
TO-220
678
就找我吧!--邀您體驗愉快問購元件!
 詢價
UTC/友順
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
2022+
TO-220AB
8000
只做原裝支持實單,有單必成。
 詢價
ST/意法
TO220
275000
一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)!
 詢價
ST/意法
22+
TO220
128038
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價
ST/意法
22+
TO220ABNONISOL
34137
只做原裝進(jìn)口現(xiàn)貨
 詢價
更多MJE3055TTU_Q供應(yīng)商 更新時間2024-12-26 9:00:00

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