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MJE3439

0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS

NPNSiliconHigh-VoltagePowerTransistors ...designedforuseinline–operatedequipmentrequiringhighfT. ?HighDCCurrentGain hFE=40–160@IC=20mAdc ?CurrentGainBandwidthProduct— fT=15MHz(Min)@IC=10mAdc ?LowOutputCapacitance Cob=10pF(

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE3439

NPN Silicon High??oltage Power Transistor

NPNSiliconHigh?VoltagePowerTransistor Thisdeviceisdesignedforuseinline?operatedequipmentrequiringhighfT. Features ?HighDCCurrentGain?hFE=40?160@IC =20mAdc ?CurrentGainBandwidthProduct?fT=15MHz(Min)@IC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE3439

NPN Silicon High-Voltage Power Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE3439G

NPN Silicon High??oltage Power Transistor

NPNSiliconHigh?VoltagePowerTransistor Thisdeviceisdesignedforuseinline?operatedequipmentrequiringhighfT. Features ?HighDCCurrentGain?hFE=40?160@IC =20mAdc ?CurrentGainBandwidthProduct?fT=15MHz(Min)@IC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE3439G

NPN Silicon High-Voltage Power Transistor

NPNSiliconHigh?VoltagePowerTransistor Thisdeviceisdesignedforuseinline?operatedequipmentrequiringhighfT. Features ?HighDCCurrentGain?hFE=40?160@IC =20mAdc ?CurrentGainBandwidthProduct?fT=15MHz(Min)@IC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE3439G

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-225AA,TO-126-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 350V 0.3A TO126

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MM3439

Lithium-IonBatteryChargeControlIC

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

NJ3439KDW

SOT-363Plastic-EncapsulateMOSFETs

FEATURE SurfaceMountPackage LowRDS(on) OperatedatLowLogicLevelGateDrive ESDProtectedGate IncludingaN-chCJ3134KandaP-chCJ3139K independently)InaPackage

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

PJA3439

60VP-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJA3439-AU

60VP-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@-10V,ID@-500mA

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PN3439

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage. FEATURES ?Lowcurrent(max.100mA) ?Highvoltage(max.350V). APPLICATIONS ?Telephonyandprofessionalcommunicationequipment.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PST3439

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

PST3439

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

SM3439NHQA

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

SM3439NHQAC-TRG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中集成電路大中集成電路股份有限公司

SSI3439J

N&P-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SUM3439

N&P-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

晶體管資料

  • 型號:

    MJE3439

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_視頻輸出 (Vid)_功率放大

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    350V

  • 最大電流允許值:

    0.3A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD410,2N5657,

  • 最大耗散功率:

    15W

  • 放大倍數(shù):

  • 圖片代號:

    B-21

  • vtest:

    350

  • htest:

    999900

  • atest:

    0.3

  • wtest:

    15

詳細(xì)參數(shù)

  • 型號:

    MJE3439

  • 功能描述:

    兩極晶體管 - BJT 0.3A 350V 15W NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
MOT
23+
TO-126
138775
詢價(jià)
ON
24+
N/A
5000
公司存貨
詢價(jià)
ST
05+
原廠原裝
1226
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
ONSEMICONDU
16+
原裝進(jìn)口原廠原包接受訂貨
1400
原裝現(xiàn)貨假一罰十
詢價(jià)
MOTOROLA/摩托羅拉
23+
TO-225AATO-126
24190
原裝正品代理渠道價(jià)格優(yōu)勢
詢價(jià)
22+
TO126
20000
保證原裝正品,假一陪十
詢價(jià)
MOTOROLA/摩托羅拉
23+
TO-126
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
MJE3439
6
6
詢價(jià)
MOTOROLA/摩托羅拉
22+
TO-225AATO-126
18000
原裝正品
詢價(jià)
22+
TO126
100000
代理渠道/只做原裝/可含稅
詢價(jià)
更多MJE3439供應(yīng)商 更新時(shí)間2024-12-22 14:10:00