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MJE3055T

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designedforgeneralpurposeamplifierandswitchingapplications.

DCCOM

Dc Components

MJE3055T

Complementary Silicon Plastic Power Transistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS?75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral?purposeamplifierandswitchingapplications. Features ?DCCurrentGainSpecifiedto10A ?HighCurrentGain?BandwidthProduct?fT=2.0MHz(Min

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE3055T

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

MJE3055T

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJE3055T

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955T APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE3055T

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE2955T ·DCcurrentgain-hFE=20–70@IC=4Adc ·Collector–emittersaturationvoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc APPLICATIONS ·Designedforgeneral–purpose switchingandamplifierapplications.

SAVANTIC

Savantic, Inc.

MJE3055T

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features LargeDCcurrent(IC=10A),highfT(fT≥2Mhz). Applications Generalpurposeandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

MJE3055T

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

Continental Device India Limited

MJE3055T

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseingeneral-purposeamplifierandswitchingapplications FEATURES: *PowerDissipation-PD=75W?Tc=25°C *DCCurrentGainhFE=20-100?lc=4.0A *vCE(isrt)=1-1V(Max.)?lc=4.0A,IB=400mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

MJE3055T

COMPLEMENTARY SILICON POWER TRANSISTORS

PowerTransistors

CentralCentral Semiconductor Corp

美國中央半導體

晶體管資料

  • 型號：

    MJE3055

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    低頻或音頻放大 （LF）_功率放大 （L）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    70V

  • 最大電流允許值：

    10A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號：

    BD207,BD213/80,BD607,3DD166B,

  • 最大耗散功率：

    90W

  • 放大倍數(shù)：

  • 圖片代號：

    B-21

  • vtest：

    70

  • htest：

    999900

  • atest：

    10

  • wtest：

    90

詳細參數(shù)

  • 型號：

    MJE30

  • 制造商：

    TRSYS

  • 制造商全稱：

    Transys Electronics

  • 功能描述：

    Plastic-Encapsulated Transistors

供應商型號品牌批號封裝庫存備注價格
CJ
17+
TO-220
6050
全新原裝正品s
 詢價
FSC
23+
TO-220
4940
原廠原裝正品
 詢價
ON
21+
TO-220
1500
詢價
ST
24+
TO-220
66500
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
ON
2025+
TO-220-3
32560
原裝優(yōu)勢絕對有貨
 詢價
24+
5000
公司存貨
 詢價
ST
01+
TO220
2500
原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨
 詢價
原廠
23+
TO-220
5000
原裝正品,假一罰十
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
ST
2018+
TO220
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
更多MJE30供應商 更新時間2025-3-29 10:18:00

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