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MTP2955

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2955D

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2955E

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2955E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP2955V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2955V

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MTP2955V

P-Channel60-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100UISTested APPLICATIONS ?LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTP2955V

PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP2955V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP2955VG

PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

供應商型號品牌批號封裝庫存備注價格
24+
TO-220
5000
公司存貨
 詢價
ST
0530+
TO-220
50
原裝
 詢價
ST/SEC進口原
17+
TO-220
6200
詢價
STM
13+/15+
TO-220AB
6250
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
FAIRCHILD
23+
TO/220
7000
絕對全新原裝!100%保質量特價!請放心訂購!
 詢價
ST
24+
TO-220
18000
原裝現(xiàn)貨假一罰十
 詢價
FAIRCHILD
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
STMicro.
23+
TO-220
7750
全新原裝優(yōu)勢
 詢價
ON
24+
TO-220
6000
進口原裝正品假一賠十,貨期7-10天
 詢價
FSC
2020+
TO-220
5000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
更多MJE2955-G供應商 更新時間2025-3-25 16:00:00

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