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MK5812

LOWEMICLOCKGENERATOR

Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

MK5812

LOWEMICLOCKGENERATOR

Features ?Packagedin8-pinSOIC ?Pb(lead)freepackage,RoHScompliant ?Providesaspreadspectrumoutputclock ?Supportsprintersandflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

MK5812

LowEMIClockGenerator

ICST

Integrated Circuit Systems

MK5812SLF

LOWEMICLOCKGENERATOR

Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

MK5812SLFTR

LOWEMICLOCKGENERATOR

Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

MRF5812

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MRF5812

NPNSILICONRFMICROWAVETRANSISTOR

DESCRIPTION: TheASIMRF5812isDesignedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. FEATURES: ?LowNoise–2.5dB@500MHz ?Ftau–5.0GHz@10V,75mA ?CostEffectiveSO-8package

ASI

Advanced Semiconductor

MRF5812

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package

ADPOW

Advanced Power Technology

MRF5812G

RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS

DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package

ADPOW

Advanced Power Technology

NTE5812

6AmpPlasticSiliconRectifier

6AmpPlasticSiliconRectifier Features: ●DiffusedJunction ●HighSurgeCapability ●CompletelyInsulatedCase ●UniformMoldedBody

NTE

NTE Electronics

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