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零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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LOWEMICLOCKGENERATOR Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LOWEMICLOCKGENERATOR Features ?Packagedin8-pinSOIC ?Pb(lead)freepackage,RoHScompliant ?Providesaspreadspectrumoutputclock ?Supportsprintersandflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputf | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LowEMIClockGenerator | ICST Integrated Circuit Systems | ICST | ||
LOWEMICLOCKGENERATOR Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LOWEMICLOCKGENERATOR Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
NPNSILICONRFMICROWAVETRANSISTOR DESCRIPTION: TheASIMRF5812isDesignedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. FEATURES: ?LowNoise–2.5dB@500MHz ?Ftau–5.0GHz@10V,75mA ?CostEffectiveSO-8package | ASI Advanced Semiconductor | ASI | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | ADPOW Advanced Power Technology | ADPOW | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | ADPOW Advanced Power Technology | ADPOW | ||
6AmpPlasticSiliconRectifier 6AmpPlasticSiliconRectifier Features: ●DiffusedJunction ●HighSurgeCapability ●CompletelyInsulatedCase ●UniformMoldedBody | NTE NTE Electronics | NTE |
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