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MJD243

ComplementarySiliconPlasticPowerTransistor

ComplementarySiliconPlasticPowerTransistor DPAK?3forSurfaceMountApplications Designedforlowvoltage,low?power,high?gainaudioamplifierapplications. Features ?Collector?EmitterSustainingVoltage? VCEO(sus)=100Vdc(Min)@IC =10mAdc ?HighDCCur

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD243

ComplementarySiliconPlasticPowerTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD243

ComplementarySiliconPlasticPowerTransistorDPAK-3forSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD243

ComplementarySiliconPlasticPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD243

ComplementarySiliconPlasticPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD243

SiliconNPNtransistorinaTO-252PlasticPackage

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowCollector?EmitterSaturationVoltage,HighCurrent?Gain. Applications Lowpoweraudioamplifier,Lowcurrent,highspeedswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MJD243

iscSiliconNPNPowerTransistor

DESCRIPTION ?DCCurrentGain- :hFE=40(Min)@IC=0.2A ?LowCollectorSaturationVoltage- :VCE(sat)=0.3V(Max.)@IC=0.5A ?ComplementtothePNPMJD253 ?MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS ?Designedforlowpo

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MJD243

ComplementarySiliconPlasticPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD243

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MJD243

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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更多MI-QC243-IWY供應(yīng)商 更新時(shí)間2025-4-12 15:30:00

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