| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
TMOSPOWERFET60AMPERES60VOLTS HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET60AMPERES60VOLTS HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-CHANNELTWOSPOWERFETs 55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR TheseTMOSPowerFETsaredesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimes | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR 55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
60V??60A??N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V–60A–N-channelPowerMOSFETApplication:Automotive Description NP60N06MLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=8.1m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V–60A–N-channelPowerMOSFETApplication:Automotive Description NP60N06PDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V??60A??N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V–60A–N-channelPowerMOSFETApplication:Automotive Description NP60N06PLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V??60A??N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V–60A–N-channelPowerMOSFETApplication:Automotive Description NP60N06VDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
60V??60A??N-channelPowerMOSFET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
PARTRON |
23+ |
sop |
10150 |
一級(jí)代理原廠VIP渠道,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
SMD |
1822+ |
QFP48 |
6852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
SMD |
24+ |
QFP48 |
65200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
Marki |
24+ |
模塊 |
400 |
詢價(jià) | |||
FREESCALE |
22+ |
HARDWAREONLY |
2000 |
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
新 |
2 |
全新原裝 貨期兩周 |
詢價(jià) | ||||
FERRBD60100MHZ1806 |
24+ |
2184 |
詢價(jià) | ||||
量大可定MATSUKI |
20+ |
SOT23-3 |
49000 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
VBSEMI/臺(tái)灣微碧 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
原廠 |
2021+ |
60000 |
原裝現(xiàn)貨，歡迎詢價(jià) |
詢價(jià) |
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