MTP60N06中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTP60N06規(guī)格書詳情
This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
MTP60N06
- 功能描述：
MOSFET DISC BY MFG 2/02
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
NA/ |
11 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
MOTOROLA |
2016+ |
TO-220 |
5254 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ON |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
ON/安森美 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
IR |
24+ |
TO 220 |
161365 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON |
TO-263 |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ON |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ON |
17+ |
TO-263 |
6200 |
詢價 | |||
ON |
23+ |
TO-263 |
10 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ON/安森美 |
24+ |
TO-220 |
56000 |
公司進(jìn)口原裝現(xiàn)貨 批量特價支持 |
詢價 |
