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MTM6N60

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM6N60

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP6N60

N-ChannelMosfetTransistor

DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. FEATURES ?DrainCurrent-ID=6A@TC=25°C ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirement

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP6N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP6N60E

TMOSPOWERFET6.0AMPERES600VOLTSRDS(on)=1.2OHMS

TMOSE-FET? PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstand

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP6N60E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP6N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW6N60E

PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MDP6N60

  • 制造商：

    MagnaChip

  • 功能描述：

    N-Channel MOSFET 600V, 6.0A, 1.4?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MAGNACHIP/美格納
2410+
TO-220
50000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價(jià)
TO-220
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
美格納Magnachip
25+23+
TO-220
25064
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
MAGNACHIP/美格納
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
MAGNADHIP
2022+
TO-220
50
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
美格納
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
美格納
14+
TO-220
550
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
MAGNACHIP/美格納
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
MAGNADHIP
23+
NA/
50
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
MAGNADHIP
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
更多MDP6N60供應(yīng)商 更新時(shí)間2025-4-1 9:14:00

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