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MTM6N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTM6N60

Power Field Effect Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM6N60

Power Field Effect Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP6N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP6N60

N-ChannelMosfetTransistor

DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. FEATURES ?DrainCurrent-ID=6A@TC=25°C ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirement

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP6N60E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP6N60E

TMOSPOWERFET6.0AMPERES600VOLTSRDS(on)=1.2OHMS

TMOSE-FET? PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstand

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP6N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW6N60E

PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
3500
詢價
MOTOROLA
24+
TO-3
1100
原裝現(xiàn)貨假一罰十
 詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
1100
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
MOTOROLA/摩托羅拉
23+
TO-3
15238
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MOT
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
MOT
2020+
原廠封裝
35000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價
MOT
10
優(yōu)勢貨源原裝正品
 詢價
PANASONIC
23+
WSMini6-F
63000
原裝正品現(xiàn)貨
 詢價
Panasonic
19+
WSMini6-F1-B
200000
詢價
更多MTM6N60供應(yīng)商 更新時間2025-3-22 16:00:00

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