MTP6N60E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTP6N60E規(guī)格書詳情
TMOS E-FET?
Power Field Effect Transistor
N?Channel Enhancement?Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
MTP6N60E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220 |
88503 |
詢價 | |||
ON |
2023+ |
TO-220 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價 | ||
ONS |
16+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON |
2020+ |
TO-220 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
ON/安森美 |
23+ |
NA/ |
10 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ON/安森美 |
24+ |
TO220-3 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON/安森美 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
MC |
2020+ |
TO-220 |
4500 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
ON(安森美) |
23+ |
11855 |
公司只做原裝正品,假一賠十 |
詢價 | |||
ON |
23+ |
TO-220 |
6893 |
詢價 |
