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MBT3904DW1T1G

Dual General Purpose Transistors

TheMBT3904DW1andMBT3904DW2devicesareaspin?offofourpopularSOT?23/SOT?323three?leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT?363six?leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBT3904DW1T1G

Dual General Purpose Transistors

TheMBT3904DW1andMBT3904DW2devicesareaspin?offofourpopularSOT?23/SOT?323three?leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT?363six?leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBT3904DW1T1G

Dual General Purpose Transistors

TheMBT3904DW1andMBT3904DW2devicesareaspin?offofourpopularSOT?23/SOT?323three?leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT?363six?leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBT3904DW1T1G

Gallium Arsenide CATV Integrated Amplifier Module

Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MBT3904DW1T1G

Dual General Purpose Transistors

TheMBT3904DW1T1andMBT3904DW2T1devicesareaspin-offofourpopularSOT-23/SOT-323three-leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT-363six-leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisideal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBT3904DW1T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

LMBT3904DW1T1

DualGeneralPurposeTransistor

DualGeneralPurposeTransistor TheLMBT3904DW1T1deviceisaspin–offofourpopularSOT–23/SOT–323three–leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT–363six–leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisd

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBT3904DW1T1G

DualGeneralPurposeTransistor

DualGeneralPurposeTransistor TheLMBT3904DW1T1deviceisaspin–offofourpopularSOT–23/SOT–323three–leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT–363six–leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisd

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

MBT3904DW1T1

DualGeneralPurposeTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBT3904DW1T1

DualGeneralPurposeTransistors

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

MBT3904DW1T1

DualGeneralPurposeTransistors

TheMBT3904DW1T1andMBT3904DW2T1devicesareaspin-offofourpopularSOT-23/SOT-323three-leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT-363six-leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisideal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBT3904DW1T1

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors TheMBT3904DW1T1,MBT3906DW1T1,andMBT3946DW1T1devicesarespin–offsofourpopularSOT–23/SOT–323three–leadeddevices.TheyaredesignedforgeneralpurposeamplifierapplicationsandarehousedintheSOT–363six–leadedsurfacemountpackage.Byputtingtwod

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

MMBT3904DW1T1

DualGeneralPurposeTransistor

WILLASWILLAS ELECTRONIC CORP

威倫威倫電子股份有限公司

SMBT3904DW1T1G

DualGeneralPurposeTransistors

TheMBT3904DW1andMBT3904DW2devicesareaspin?offofourpopularSOT?23/SOT?323three?leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT?363six?leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SMBT3904DW1T1G

DualGeneralPurposeTransistors

TheMBT3904DW1andMBT3904DW2devicesareaspin?offofourpopularSOT?23/SOT?323three?leadeddevice.ItisdesignedforgeneralpurposeamplifierapplicationsandishousedintheSOT?363six?leadedsurfacemountpackage.Byputtingtwodiscretedevicesinonepackage,thisdeviceisidealfor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    MBT3904DW1T1G

  • 功能描述：

    兩極晶體管 - BJT 200mA 60V Dual NPN

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
22+
SOT363
600000
原裝正品
 詢價
ON/安森美
21+
SOT-363
600000
航宇科工半導(dǎo)體-中國航天科工集團(tuán)戰(zhàn)略合作伙伴!
 詢價
ON
24+
SOT363
23000
全新原裝現(xiàn)貨,量大特價,原廠正規(guī)渠道!
 詢價
ON
1717+
SOT23
30000
ON專營→可提供17發(fā)票
 詢價
ON/安森美
2105+
SC-70
10053
詢價
ON
21+
SOT23
378000
詢價
ON
21+
SOT-363
45000
全新原裝公司現(xiàn)貨
詢價
ON
22+
SOT-363
1002000
只做原裝,公司現(xiàn)貨,提供一站式BOM配單服務(wù)!
 詢價
ON
23+
SOT-363
45000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ON
21+
SOT-363
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
更多MBT3904DW1T1G供應(yīng)商 更新時間2024-12-26 12:31:00

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