首頁 >MAX5812MEUT+T>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MAX5812MEUT+T | 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:SOT-23-6 類別:集成電路(IC) 數(shù)模轉(zhuǎn)換器(DAC) 描述:IC DAC 12BIT V-OUT SOT23-6 | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | |
12-BitLow-Power,2-Wire,SerialVoltage-OutputDAC GeneralDescription TheMAX5812isasingle,12-bitvoltage-output,digital-to-analogconverter(DAC)withanI2C?-compatible2-wireinterfacethatoperatesatclockratesupto400kHz.Thedeviceoperatesfromasingle2.7Vto5.5Vsupplyanddrawsonly100μAatVDD=3.6V.Alow-powerpower-dow | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
12-BitLow-Power,2-Wire,SerialVoltage-OutputDAC GeneralDescription TheMAX5812isasingle,12-bitvoltage-output,digital-to-analogconverter(DAC)withanI2C?-compatible2-wireinterfacethatoperatesatclockratesupto400kHz.Thedeviceoperatesfromasingle2.7Vto5.5Vsupplyanddrawsonly100μAatVDD=3.6V.Alow-powerpower-dow | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
MOSFET:N-ChannelSiliconMOSFETSBD:SchottkyBarrierDiodeGeneral-PurposeSwitchingDeviceApplications MOSFET:N-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode Features ?CompositetypewithaN-channelsilliconMOSFET(MCH3445)andaschottkybarrierdiode(SS10015M)containedinonepackagefacilitatinghigh-densitymounting. ?[MOSFET] ?LowON-resistance. ?Ultrahigh-speedsw | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO | ||
LowEMIClockGenerator | ICSTChina Resources Microelectronics Limited Limited 華潤微電子華潤微電子有限公司 | ICST | ||
LOWEMICLOCKGENERATOR Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LOWEMICLOCKGENERATOR Features ?Packagedin8-pinSOIC ?Pb(lead)freepackage,RoHScompliant ?Providesaspreadspectrumoutputclock ?Supportsprintersandflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputf | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LOWEMICLOCKGENERATOR Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LOWEMICLOCKGENERATOR Features ?Packagedin8-pinSOIC ?Providesaspreadspectrumoutputclock ?Supportsflatpanelcontrollers ?Acceptsaclockorcrystalinput(providessame frequencyditheredoutput) ?Inputfrequencyrangeof4to32MHz ?Outputfrequencyrangeof8to64MHz ?2Xfrequencymultiplic | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | ADPOW Advanced Power Technology | ADPOW | ||
NPNSILICONRFMICROWAVETRANSISTOR DESCRIPTION: TheASIMRF5812isDesignedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. FEATURES: ?LowNoise–2.5dB@500MHz ?Ftau–5.0GHz@10V,75mA ?CostEffectiveSO-8package | ASI Advanced Semiconductor | ASI | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features ?LowNoise-2.5dB@500MHZ ?AssociatedGain=15.5dB@500MHz ?Ftau-5.0GHz@10v,75mA ?CostEffectiveSO-8package | ADPOW Advanced Power Technology | ADPOW | ||
6AmpPlasticSiliconRectifier 6AmpPlasticSiliconRectifier Features: ●DiffusedJunction ●HighSurgeCapability ●CompletelyInsulatedCase ●UniformMoldedBody | NTE NTE Electronics | NTE | ||
NTE5812thruNTE58176AmpPlasticSiliconRectifier 6AmpPlasticSiliconRectifier Features: ●DiffusedJunction ●HighSurgeCapability ●CompletelyInsulatedCase ●UniformMoldedBody | NTE NTE Electronics | NTE | ||
10AmpPlasticSiliconRectifier | NTE NTE Electronics | NTE | ||
20AOutputCurrent | TI1Texas Instruments 德州儀器 | TI1 | ||
20-A3.3-VInputAdjustableIntegratedSwitchingRegulator | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
20-A3.3-VInputAdjustableIntegratedSwitchingRegulator | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
20-A3.3-VInputAdjustableIntegratedSwitchingRegulator | TITexas Instruments 德州儀器美國德州儀器公司 | TI |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MAX5812MEUT+T
- 制造商:
Analog Devices Inc./Maxim Integrated
- 類別:
集成電路(IC) > 數(shù)模轉(zhuǎn)換器(DAC)
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 位數(shù):
12
- 數(shù)模轉(zhuǎn)換器數(shù):
1
- 建立時(shí)間:
12μs
- 輸出類型:
Voltage - Buffered
- 差分輸出:
無
- 數(shù)據(jù)接口:
I2C
- 參考類型:
Supply
- 電壓 - 供電,模擬:
2.7V ~ 5.5V
- 電壓 - 供電,數(shù)字:
2.7V ~ 5.5V
- INL/DNL (LSB):
±2,±1(最大)
- 架構(gòu):
電阻串 DAC
- 工作溫度:
-40°C ~ 85°C
- 封裝/外殼:
SOT-23-6
- 供應(yīng)商器件封裝:
SOT-6
- 安裝類型:
表面貼裝型
- 描述:
IC DAC 12BIT V-OUT SOT23-6
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Inte |
24+ |
SOT-6 |
25000 |
ADC/DAC轉(zhuǎn)換主營芯片-原裝正品 |
詢價(jià) | ||
MAXIM |
19+ |
SOT23-6 |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | ||
MAXIM |
23+ |
SOT23-6 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
Maxim Integrated |
21+ |
SOT-23-6 |
56200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
Maxim |
1931+ |
N/A |
900 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
MAXIM/美信 |
23+ |
SOT23-6 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MAXIM |
20+ |
SOT-23-6 |
932 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
MAXIM/美信 |
21+ |
SOT23-6 |
5000 |
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn) |
詢價(jià) | ||
MAXIM/美信 |
23+ |
SOT23-6 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MAXIM/美信 |
2022+ |
2500 |
6600 |
只做原裝,假一罰十,長期供貨。 |
詢價(jià) |
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