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首頁 >M59DR016D>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
M59DR016D	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016D100ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016D100ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016D120ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016D120ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016DZB	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016C	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016CZB	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016DZB	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS

詳細參數(shù)

型號：
M59DR016D
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市中福國際管理有限公司	M59DR016EC85ZB6	ST	21+	BGA-48D	23480		詢價
深圳市一線半導體有限公司	M59DR032A		24+	BGA	3000	公司存貨	詢價
深圳市卓越微芯電子有限公司	M59DR032A	ST	2020+	BGA	4500	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
華富測量(深圳)傳感技術(shù)有限公司	M59DR032A	ST	2138+	BGA	8960	專營BGA,QFP原裝現(xiàn)貨,假一賠十	詢價
深圳市恒達億科技有限公司	M59DR032A	ST	23+	BGA	3000	全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!	詢價
深圳市科恒偉業(yè)電子有限公司	m59dr032a120zb6	st	1815+	fbga	6528	只做原裝正品假一賠十為客戶做到零風險!!	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	M59DR032A120ZB6	ST/意法	23+	BGA	3000	一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價
深圳市弘為電子有限公司	M59DR032A-120ZB6	ST	24+	BGA	7748	原裝現(xiàn)貨假一罰十	詢價
深圳市創(chuàng)盛芯科技有限公司	M59DR032A-120ZB6	ST/意法	24+		81	原裝現(xiàn)貨假一賠十	詢價
深圳和潤天下電子科技有限公司	M59DR032A-120ZB6	ST/意法	N/A	22+	8681	原裝正品現(xiàn)貨可開增值稅發(fā)票	詢價

更多M59DR016D供應商更新時間2025-3-22 10:34:00

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