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零件編號(hào)	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
M59DR016	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016C	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016C100ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016C100ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016C120ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016C120ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016CZB	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016D	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016D100ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M59DR016D100ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

詳細(xì)參數(shù)

型號(hào)：
M59DR016
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	M59DR016C120ZB6	ST	24+	BGA	42	現(xiàn)貨	詢價(jià)
深圳市富誠威科技有限公司	M59DR016C120ZB6	ST	24+	BGA	2978	100%全新原裝公司現(xiàn)貨供應(yīng)!隨時(shí)可發(fā)貨	詢價(jià)
深圳市卓越微芯電子有限公司	M59DR016C	ST	2020+	BGA	4500	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市佳鑫美電子科技有限公司	M59DR016C	ST	24+	BGA48	3629	原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來電!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	m59dr016c120zb6t	st	1815+	FBGA	6528	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
深圳市銳視安科技有限公司	M59DR016C	ST	0126/0125	BGA48	18425	特價(jià)銷售歡迎來電!!	詢價(jià)
深圳市納艾斯科技有限公司	M59DR016C-120ZA6	ST	2020+	BGA48	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
華富測(cè)量(深圳)傳感技術(shù)有限公司	M59DR016C	ST	2138+	BGA	8960	專營BGA,QFP原裝現(xiàn)貨,假一賠十	詢價(jià)
深圳市恒達(dá)億科技有限公司	M59DR016C-120ZA6	ST	23+	BGA	3200	全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	M59DR016C-120ZB6	ST/意法	23+	BGA	13000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多M59DR016供應(yīng)商更新時(shí)間2025-3-21 14:00:00

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