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首頁 >M59DR016C>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
M59DR016C	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016C100ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016C100ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016C120ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016C120ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016CZB	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016CZB	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016D	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS
M59DR016DZB	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團	STMICROELECTRONICS

詳細參數

型號：
M59DR016C
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導體有限公司	M59DR016C		24+		3000	公司存貨	詢價
深圳市卓越微芯電子有限公司	M59DR016C	ST	2020+	BGA	4500	百分百原裝正品真實公司現貨庫存本公司只做原裝可	詢價
深圳市佳鑫美電子科技有限公司	M59DR016C	ST	24+	BGA48	3629	原裝優(yōu)勢!房間現貨!歡迎來電!	詢價
深圳市銳視安科技有限公司	M59DR016C	ST	0126/0125	BGA48	18425	特價銷售歡迎來電!!	詢價
華富測量(深圳)傳感技術有限公司	M59DR016C	ST	2138+	BGA	8960	專營BGA,QFP原裝現貨,假一賠十	詢價
深圳市中福國際管理有限公司	M59DR016C	ST	21+	BGA	23480		詢價
深圳市富誠威科技有限公司	M59DR016C120ZB6	ST	24+	BGA	2978	100%全新原裝公司現貨供應!隨時可發(fā)貨	詢價
深圳市科恒偉業(yè)電子有限公司	m59dr016c120zb6t	st	1815+	FBGA	6528	只做原裝正品假一賠十為客戶做到零風險!!	詢價
深圳市納艾斯科技有限公司	M59DR016C-120ZA6	ST	2020+	BGA48	80000	只做自己庫存,全新原裝進口正品假一賠百,可開13%增	詢價
深圳市恒達億科技有限公司	M59DR016C-120ZA6	ST	23+	BGA	3200	全新原裝、誠信經營、公司現貨銷售!	詢價

更多M59DR016C供應商更新時間2025-3-23 16:00:00

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