| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
KSMU1N50 | 500V N-CHANNEL MOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
TMOSPOWERFET1.0AMPERE500VOLTSRDS(on)=5.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal | Motorola Motorola, Inc | Motorola | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N??hannelTO??20PowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET1.0AMPERES500VOLTSRDS(on)=5.0OHM TMOSE?FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi | Motorola Motorola, Inc | Motorola | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
PowerMOStransistorIsolatedversionfoPHP1N50E GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpack,plasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePow | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Highvoltagelinear120/220V6Wfullvoltagefilamentlampsolution | REACTORShaanxi Reactor Microelectronics Co., Ltd. 亞成微陜西亞成微電子股份有限公司 | REACTOR | ||
Highvoltagelinear120/220V50Wfullvoltagefloodlightsolution | REACTORShaanxi Reactor Microelectronics Co., Ltd. 亞成微陜西亞成微電子股份有限公司 | REACTOR | ||
Highvoltagelinear120/220V10Wfullvoltagebulblampsolution | REACTORShaanxi Reactor Microelectronics Co., Ltd. 亞成微陜西亞成微電子股份有限公司 | REACTOR | ||
520VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
520VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
KERSEMI |
23+ |
TO-251 |
10000 |
公司只做原裝正品 |
詢價 | ||
KERSEMI |
TO-251 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
KERSEMI |
23+ |
TO-251 |
6000 |
原裝正品，支持實單 |
詢價 | ||
KERSEMI |
22+ |
TO-251 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
KERSEMI |
24+ |
TO-251 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
KERSEMI/科盛美 |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
KERSEMI |
21+ |
TO-251 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
KERSEMI/科盛美 |
23+ |
NA/ |
3749 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
KERSEMI |
TO-251 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
KERSEMI |
23+ |
TO251 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
相關(guān)規(guī)格書
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