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MTP1N50E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MTP1N50E
廠商型號

MTP1N50E

功能描述

TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM

文件大小

159.26 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-27 17:30:00

人工找貨

MTP1N50E價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

MTP1N50E規(guī)格書詳情

TMOS E?FET Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Robust High Voltage Termination

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號:

    MTP1N50E

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
MOTOROLA/摩托羅拉
1942+
TO-220
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
詢價(jià)
ON
23+
TO-220
6893
詢價(jià)
ON
2020+
TO-220
35000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價(jià)
VBSEMI/微碧半導(dǎo)體
24+
TO220
48000
臺積電晶圓長電封裝微碧原裝可長久大量供應(yīng)
詢價(jià)
VBSEMI/臺灣微碧
23+
TO-220
20000
原裝正品 歡迎咨詢
詢價(jià)
原裝MOT
24+
TO-220
35200
一級代理/放心采購
詢價(jià)
MOT
06+
TO-220
3000
原裝庫存
詢價(jià)
ON
24+
N/A
1000
詢價(jià)
ON
23+
TO-220
5000
原裝正品,假一罰十
詢價(jià)
ON/安森美
23+
TO220
15432
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)