首頁 >JANTXV2N6052>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
JANTXV2N6052 | PNP DARLINGTON POWER SILICON TRANSISTOR PNPDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/501 | MicrelMicrel Semiconductor 麥瑞半導(dǎo)體 | Micrel | |
JANTXV2N6052 | 包裝:卷帶(TR) 封裝/外殼:TO-204AA,TO-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP DARL 100V 12A TO3 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | |
DarlingtonComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS DarlingtonComplementarySiliconPowerTransistors ...designedforgeneral?purposeamplifierandlowfrequencyswitchingapplications. ?HighDCCurrentGain— hFE=3500(Typ)@IC=5.0Adc ?Collector?EmitterSustainingVoltage—@100mA VCEO(sus)=80Vdc(Min)—2N6058 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
POWERTRANSISTORS(12A,150W) DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS | bocaBoca Semiconductor Corporation 博卡博卡半導(dǎo)體公司 | boca | ||
POWERCOMPLEMENTARYSILICONTRANSISTORS POWERCOMPLEMENTARYSILICONTRANSISTORS The2N6050,2N6051and2N6052aresiliconepitaxial-basetransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase. Theyareintededforuseinpowerlinearandlowfrequencyswitchingapplications. ThecomplementaryNPNtypesar | COMSET Comset Semiconductor | COMSET | ||
BipolarPNPDeviceinaHermeticallysealedTO3 | SEME-LAB Seme LAB | SEME-LAB | ||
PNPDARLINGTONPOWERSILICONTRANSISTOR PNPDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/501 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
DarlingtonComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
PNPDARLINGTONPOWERSILICONTRANSISTOR PNPDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/501 | MicrelMicrel Semiconductor 麥瑞半導(dǎo)體 | Micrel | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWERCOMPLEMENTARYSILICONTRANSISTORS | COMSET Comset Semiconductor | COMSET | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
Transistor,Bipolar,TO-3,PNP,12A,100V,150W Description:AsiliconPNPDarlingtontransistorsinaTO-3typecasedesignedforgeneral-purposeamplifierandlow-frequencyapplications Features -HighDCCurrentGain -Collector-EmitterSustainingVoltage:Vced(sus)=100VMin@100mA -MonolithicConstructionwithBuit-inBase-Emitte | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
SILICONDARLINGTONPOWERTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6050,2N6057seriestypesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighgainamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
iscSiliconPNPDarlingtionPowerTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
DarlingtonComplementarySiliconPowerTransistors DarlingtonComplementarySiliconPowerTransistors Thispackageisdesignedforgeneral?purposeamplifierandlowfrequencyswitchingapplications. Features ?HighDCCurrentGain—hFE=3500(Typ)@IC=5.0Adc ?Collector?EmitterSustainingVoltage—@100mAVCEO(sus)=100Vdc(Min) ?M | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PNPDARLINGTONPOWERSILICONTRANSISTOR PNPDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/501 | MicrelMicrel Semiconductor 麥瑞半導(dǎo)體 | Micrel |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
JANTXV2N6052
- 制造商:
Microchip Technology
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)
- 系列:
Military, MIL-PRF-19500/501
- 包裝:
卷帶(TR)
- 晶體管類型:
PNP - 達(dá)林頓
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):
3V @ 120mA,12A
- 電流 - 集電極截止(最大值):
1mA
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
1000 @ 6A,3V
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-204AA,TO-3
- 供應(yīng)商器件封裝:
TO-3
- 描述:
TRANS PNP DARL 100V 12A TO3
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NO |
24+ |
NO |
160 |
詢價(jià) | |||
Aeroflex |
24+ |
COC |
6300 |
“芯達(dá)集團(tuán)”專注軍工級(jí)宇航級(jí)元器件歡迎來電咨詢0755 |
詢價(jià) | ||
MICROSEMI |
638 |
原裝正品 |
詢價(jià) | ||||
Microsemi Corporation |
2022+ |
TO-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
Microchip Technology |
24+ |
TO-204AA TO-3 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
IR |
22+ |
TO-3 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
TO-3 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-3 |
7000 |
詢價(jià) | |||
MICROSEMI |
1809+ |
TO-3 |
26 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
24+ |
N/A |
51000 |
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) |
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